Electrical Characterization of Nanopolyaniline/Porous Silicon Heterojunction at High Temperatures
نویسندگان
چکیده
منابع مشابه
Silicon Bulk Mobility at High Ambient Temperatures
One of the goals of the PARASITICS project was the evaluation of decisive physical models in the high temperature range (300 K – 700 K) by comparison between simulation and electrical measurements of suitable test structures. Various van der Pauw devices were examined to test the microscopic-based mobility model of Schenk [1]. In order to make the comparison complete, calculated Hall factors as...
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ACKNOWLEDGEMENTS I am deeply indebted to Dr. John D. Cressler for his patience, guidance, and support throughout my master's program. My inspiration came from his passion for research and his confidence in my abilities. Working under his leadership in such an exciting field was both educationally and professionally enriching. I would also like to thank the other members of my thesis advisory co...
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Direct assembly of molecules onto silicon surfaces is of particular interest for potential employment in hybrid organic-semiconductor devices. In the study we report here, aryl diazonium salts were used to assemble covalently bound molecular groups on a hydride-passivated, oxide-free n-type Si(111) surface. The reaction of 4-(trimethylsilylethynyl)benzenediazonium tetrafluoroborate generates a ...
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ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2013
ISSN: 1687-4110,1687-4129
DOI: 10.1155/2013/568175